|
Sr# |
Bi-Polar
Junction Transistor (BJT) |
Metal Oxide Field
Effect Transistor (MOSFET) |
|
1 |
It is a Bipolar Device |
It is majority carrier
Device |
|
2 |
Current control Device |
Voltage control Device. |
|
3 |
Output is controlled by
controlling base current |
Output is controlled by
controlling gate voltage |
|
4 |
Negative temperature
coefficient |
Positive temperature
coefficient |
|
5 |
So, paralleling of BJT is
difficult. |
So, paralleling of this
device is easy. |
|
6 |
Dive circuit is complex.
It should provide |
Dive circuit is simple.
It should provide |
|
7 |
constant current (Base
current) |
constant voltage (gate
voltage) |
|
8 |
Losses are low. |
Losses are higher than
BJTs. |
|
9 |
So used in high power
applications. |
Used in low power
applications. |
|
10 |
BJTs have high voltage
and current ratings. |
They have less voltage
and current ratings. |
|
11 |
Switching frequency is
lower than MOSFET. |
Switching frequency is
high. |
Breaker Schemes in Substations — Types, Design, Advantages, Disadvantages, and Comparison Author: Engr. Aneel Kumar Figure 1: Infographic overview of breaker schemes commonly used in substations. Introduction The breaker scheme or busbar arrangement in a substation defines how incoming feeders, outgoing feeders, and power transformers are connected to the bus. The choice of scheme has a direct impact on system reliability, maintainability, safety, and cost . A simple bus scheme is economical but vulnerable to outages, while advanced schemes such as breaker-and-a-half or double-bus/double-breaker provide very high reliability but at much higher cost and design complexity. Engineers select breaker schemes considering fault tolerance, maintenance needs, space requirements, expansion possibilities, protection coordination, and capital investment . Below, we explain eac...
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